The Smart Lighting Engineering Technology Research Center at Rensselaer Polytechnic Institute announced earlier that it has successfully integrated LEDs and power transistors on the same gallium nitride (GaN). Researchers say the innovation will open the door to a new generation of LED technology because it is cheaper to manufacture, more efficient, and new features and applications far beyond lighting.

At the heart of the current LED lighting system is an LED chip made of gallium nitride, but many external components such as inductors, capacitors, germanium interconnects and wiring are to be installed or integrated into the wafer. The large size of the wafer that integrates these necessary components adds to the design complexity of the lighting product. In addition, the assembly process of these complex LED lighting systems is also quite slow, requiring not only a lot of manual operation, but also expensive.

A study led by T. Paul Chow, a professor of electronics and systems engineering at Rensselaer Polytechnic Institute, is trying to solve these challenges by developing a chip with components made entirely of GaN. This fully integrated, stand-alone wafer simplifies the manufacture of LEDs, reducing assembly and the required automation steps. In addition, thanks to a single wafer, the ratio of part failures can be reduced, energy efficiency and cost effectiveness, and flexibility in lighting design.

Chow and the research team grew the GaN LED structure directly on top of the gallium nitride high electron mobility transistor (HEMT). They used several basic techniques to interconnect the two regions, creating what they call the first individual components that integrate HEMTs and LEDs on the same GaN wafer. The component grows on a blue-marked substrate and exhibits both light output and optical density compared to standard GaN LED components. Chow said the study is important for the development of new light-emitting integrated circuit optoelectronic components.

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