Nanoscale Ultra-Precision Single-Point Diamond CNC Turning Lathe
DJC-100A Ultra-Precision Single-Point Diamond Turning Lathe, equipped with independent patent technology of hydrostatic spindle, hydrostatic guide rail and processing software. For optical lens, infrared lens, mirror, precision mechanical parts and core. Can realize turning and milling by flying cutter two modes. Machine tool has two-axis, three-axis, four-axis function, machining caliber 0~200 mm.
The plane, cylinder, cone, sphere, aspherical surface, diffraction surface, Fresnel and free surface can be processed with the support of the proprietary software.
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This achievement breaks through a series of material device technical problems such as organic chemical vapor deposition (MOCVD) equipment for ZnO-based material growth, ZnO single crystal preparation, ZnO thin film material growth and doping, ohmic contact, etc., forming a ZnO single crystal substrate. Technology, ZnO metal MOCVD system technology, MOCVD homoepitaxial technology of ZnO material and ZnO p-type doping in-situ control and activation technology, etc., are independently intellectual property rights technology, which is based on the aluminum-magnesium strontium aluminate substrate of Tohoku University, Japan. A major scientific and technological research result after successful development of ZnO-based LEDs by molecular beam epitaxy indicates that China has successfully entered the international leading ranks of ZnO light-emitting devices in the frontier strategic high-tech field.
Recently, an important breakthrough was made in the National 863 Program “Study on Several Key Technologies of ZnO-Based Short-Wavelength Lasers†jointly undertaken by Nanjing University and the Shanghai Institute of Optics and Fine Mechanics of the Chinese Academy of Sciences. After three years of material growth and process experiments, the research team successfully developed the ZnO-based homogenous PN junction light-emitting device (LED) for the first time in the world, and realized blue and yellow light emission at room temperature (29 ° C).